Model of Vernier devices in silicon-on-insulator technology |
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| Affiliation: | 1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190 Beijing, China;2. State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road, 300072 Tianjin, China;3. Shanghai Institute of Measurement and Testing Technology, National Center of Measurement and Testing for East China, National Center of Testing Technology, 201203 Shanghai, China;4. Department of Material Science, Fudan University, Shanghai 200433, China;5. Institute of Optoelectronic Engineering, Jinan University, Guangzhou 510632, China;6. College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590, China;1. Electronics and Information College, Hangzhou Dianzi University, Xiasha Campus, Hangzhou 310018, China;2. State Key Lab of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China;1. School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China;2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China;3. Beijing Key Laboratory of Work Safety Intelligent Monitoring, Beijing University of Posts and Telecommunications, Beijing 100876, China;1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China;2. College of Physics, Liaoning University, 66 Chongshan Mid Road, Shenyang 110036, China |
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| Abstract: | In order to increase the number of channels that could be multiplexed or demultiplexed in the dense wavelength division multiplexed (DWDM) system based on the resonators on silicon-on-insulator (SOI) technology, the Vernier effect in the series-coupled racetrack resonators is presented to extend the free spectral range (FSR) of the DWDM systems. A method is developed based on a matrix approach to simulate Vernier devices. A three-dimensional full vectorial finite difference (FVFD) model, specifically suited for high index contrast and smaller size waveguides, for example, a waveguide in SOI technology, is developed to obtain the properties of a waveguide. Finally, the Vernier effect in the two series-coupled racetrack resonators is experimentally verified with an improved FSR and interstitial resonance suppression. |
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| Keywords: | FVFD Vernier effect Series-coupled racetrack resonators |
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