Study on fast luminescence component induced by gamma-rays in Ce doped LiCaAlF6 scintillators |
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| Affiliation: | 1. Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;2. Tokuyama Corp, 1-1 Mikage-cho, Shunan-shi, Yamaguchi 745-8648, Japan;3. Kyusyu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu-shi, Fukuoka 808-0196, Japan;4. Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;1. Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Grudziadzka 5, 87-100, Torun, Poland;2. Institute of Electronic Materials Technology, Wolczynska 133, 01-919, Warsaw, Poland;3. Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662, Warsaw, Poland;1. STFC, Rutherford Appleton Laboratory, ISIS Facility, Harwell, OX11 0QX, United Kingdom;2. Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan;1. Institute of Physics, Kazimierz Wielki University in Bydgoszcz, 85-090 Bydgoszcz, Poland;2. Department of Electronics, Ivan Franko National University of Lviv, 79017 Lviv, Ukraine;3. SSI Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkiv, Ukraine;4. Department of Mathematics and Physics, West Kazakhstan State University, 090000 Uralsk, Kazakhstan;5. Institute of Nuclear Physics, Polish Academy of Sciences, 31-342 Krakow, Poland;1. Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192, Japan;2. Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, 6-6-07 Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;3. Department of Electrical and Computer Engineering, University of Saskatchewan, 57 Campus Dr., Saskatoon, SK S7N5A9, Canada;1. Department of Applied Chemistry, Graduate School of Engineering, Tohoku University, Sendai, 980-8579, Japan;2. Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara, 630-0192, Japan;3. Electrical and Electronic Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka Nonoichi Ishikawa, 921-8501, Japan;1. Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Key Lab of Optoelectronic Information Technology (Ministry of Education), Key Lab of Micro-Opto-Electro-Mechanical Systems (MOEMS) Technology (Ministry of Education), Tianjin University, Tianjin, 300072, China;2. Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian Province, 350002, China |
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| Abstract: | We discuss the origin of the fast luminescence component induced by fast electrons generated in gamma-ray interactions in Ce doped LiCaAlF6 scintillators. Although the slow luminescence component induced by Ce3+ emissions depends on the Ce concentration in the LiCaAlF6 scintillator, the fast component is independent. The fast component is suggested to be generated in the host matrix of the LiCaAlF6 crystal. From quantitative considerations based on Frank–Tamm equation, which shows the light yield of the Cherenkov radiation, the Cherenkov radiation was determined as the origin of the fast component. We, additionally, found that the slow rise time of main Ce3+ emissions in the Ce:LiCaAlF6 scintillator plays an important role to perform the pulse shape discrimination. |
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| Keywords: | He-3 alternatives Neutron scintillator Pulse shape discrimination Cherenkov radiation |
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