| Institution: | 1. Faculty of Electrical and Computer Engineering, Advanced Devices Simulation Lab, Tarbiat Modares University, PO Box 14115-194, Tehran 1411713116, Iran;2. Faculty of Engineering, Shahrekord University, Shahrekord 8818634141, Iran;1. Department of Applied Physics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands;2. National Science Center “Kharkiv Institute of Physics and Technology”, Akademichna St. 1, 61108 Kharkiv, Ukraine;1. Department of Electronic Engineering, Shang Hai Jian Qiao University, Shanghai 201306, P.R. China;2. Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, P.R. China;3. School of Electronics and Information, Nantong University, Nantong 226019, P.R. China;1. State Key Lab for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871, China;2. Department of Mechanics, Beijing Jiaotong University, Beijing 100044, China;1. Department of Electronic Engineering, Shang Hai Jian Qiao University, Shanghai 201306, PR China;2. Key Laboratory of Polar Materials and Devices, East China Normal University, Shanghai 200241, PR China;3. School of Electronics and Information, Nantong University, Nantong 226019, PR China |
