A buffer direct injection and direct injection readout circuit with mode selection design for infrared focal plane arrays |
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Affiliation: | 1. Department of Electrical Engineering, National Chi Nan University, No. 1, University Rd, Puli, Nantou County 545, Taiwan, ROC;2. Department of Electronics Engineering, Nan Kai University of Technology, No. 568, Zhongzheng Rd, Caotun, Nantou County 542, Taiwan, ROC;1. Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland;2. Vigo System S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland;1. Rzanov Institute of Semiconductor Physics SB RAS, 13 Lavrentyev aven., Novosibirsk, 630090, Russia;2. Lashkaryov Institute of Semiconductor Physics NAS, Ukraine, 41 Nauki aven., 03028, Kyiv, Ukraine;3. Tomsk State University, 36 Lenin aven., 634050, Tomsk, Russia;4. Novosibirsk State University, 1 Pirogov str., Novosibirsk, 630090, Russia;1. Zilkha Neurogenetic Institute, Department of Physiology and Biophysics, Keck School of Medicine of the University of Southern California, Los Angeles, California;2. Department of Central Leptin Signaling, Pennington Biomedical Research Center, Baton Rouge, Louisiana |
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Abstract: | This paper proposes a solution to the excessive area penalty associated with traditional buffer direct injection (BDI) for single pixel. The proposed solution reduces the area and power consumption of BDI to combine the direct injection (DI) within a shared architecture, while a dual-mode readout circuit expands the functionality and performance of the array readout circuit of infrared sensor. An experimental array of 10 × 8 readout circuits was fabricated using TSMC 2P4M 0.35 μm 5 V technology. Measurements were obtained using a main clock with a frequency of 3 MHz and power consumption of 9.94 mW. The minimum input current was 119 pA in BDI and 1.85 pA in DI. The signal swing was 2 V, the root mean square noise voltage was 1.84 mV, and the signal-to-noise ratio was 60 dB. This approach is applicable to mid- and long-band sensors to increase injection efficiency and resolution. |
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Keywords: | Readout circuit Dual switch Direct injection Buffer direct injection Pixel |
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