A new circuit model of HgCdTe photodiode for SPICE simulation of integrated IRFPA |
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| Affiliation: | 1. Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean, Nanjing University of Information Science &Technology, Nanjing, 210044, China;2. Jiangsu Collaborative Innovation Center on Atmospheric Environment and Equipment Technology (CICAEET), Nanjing University of Information Science & Technology, Nanjing, 210044, China;3. School of Physics and Optoelectronic Engineering, Nanjing University of Information Science &Technology, Nanjing, 210044, China;1. Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701, Republic of Korea;2. Department of Physics, North Carolina State University, Raleigh, NC 27695-8202, United States;1. School of Physics, Astronomy and Computational Sciences, George Mason University, USA;2. US Army Research Laboratory, USA;3. Defense Advanced Research Projects Agency, Microsystems Technology Office, USA;4. Department of Electrical and Computer Engineering, George Mason University, USA;1. Department of Physics, Suleyman Demirel University, Isparta, Turkey;2. Film Device Fabrication-Characterization and Application FDFCA Research Group USTO, 31130, Oran, Algeria;3. Physics Faculty, USTOMB University, POBOX 1505, Mnaouer, 31130, Oran, Algeria |
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| Abstract: | We propose a novel sub circuit model to simulate HgCdTe infrared photodiodes in a circuit simulator, like PSPICE. We have used two diodes of opposite polarity in parallel to represent the forward biased and the reverse biased behavior of an HgCdTe photodiode separately. We also connected a resistor in parallel with them to represent the ohmic shunt and a constant current source to represent photocurrent. We show that by adjusting the parameters in standard diode models and the resistor and current values, we could actually fit the measured data of our various HgCdTe photodiodes having different characteristics. This is a very efficient model that can be used for simulation of readout integrated circuit (ROIC) for HgCdTe IR photodiode arrays. This model also allows circuit level Monte Carlo simulation on a complete IRFPA at a single circuit simulator platform to estimate the non-uniformity for given processes of HgCdTe device fabrication and Si ROIC fabrication. |
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| Keywords: | Circuit model FPA HgCdTe IR detector Photodiode |
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