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Infrared ellipsometry of nanometric anisotropic dielectric layers on absorbing materials |
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| Institution: | 1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea;2. Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea;3. Department of Phisics, Sungkyunkwan University, Suwon 440-746, Republic of Korea;4. College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea;1. Randall Laboratory of Physics, University of Michigan, Ann Arbor, MI 48109-1040, USA;2. University of California Davis, Department of Physics, One Shields Ave., Davis, CA 95616, USA |
| Abstract: | An inversion problem of infrared ellipsometry is resolved on the basis of a fresh mathematical approach, which does not use the traditional regression analysis for data handling and has no need of initial guesses for the desired parameters. It is shown that obtained simple analytical equations for ellipsometric quantities open up new possibilities for determining optical parameters of an anisotropic ultrathin layer. The novel method possesses very high sensitivity because it is based on the phase conversion measurements of polarized reflected light. The method is tested using a numerical simulation and the results demonstrate clearly that it is successfully applicable for nanometric layers in the infrared spectral region. |
| Keywords: | Infrared ellipsometry Anisotropic film Ultrathin layer Material characterization |
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