Influence of sintering temperatures on LiF:Mg,Cu,P with various magnesium concentrations |
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| Affiliation: | 1. State Key Laboratory of NBC Protection for Civilian, P.O. Box 1044, Ext. 201, Beijing 102205, PR China;2. Solid Dosimetric Detector and Method Laboratory, P.O. Box 1044, Ext. 204, Beijing 102205, PR China;1. Graduate School of Natural Science and Technology, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan;2. Oarai Research Center, Chiyoda Technol Corporation, Oarai-machi, Ibaraki 311-1313, Japan;3. National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage-ku, Chiba 263-8555, Japan;4. Nikon Instech Co., Ltd., Tanakanishi, Sakyo-ku, Kyoto 606-8221, Japan;1. Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimosti Avenue, 220072 Minsk, Belarus;2. ITMO University, 49 Kronverkskiy pr., 197101 Saint-Petersburg, Russia;3. Department of Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, 130a Lermontova Str., 664033 Irkutsk, Russia;4. Física i Cristal·lografia de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili (URV), Campus Sescelades, c/Marcel·lí Domingo, s/n., E-43007 Tarragona, Spain;1. Federal University of Technology – Parana, Av. Desembargador Westphalen, 637 – Bloco N – Physics Academic Department, CEP 80010-110 Curitiba, PR, Brazil;2. Institute of Nuclear Physics Polish Academy of Sciences, Radzikowskiego 152, 31-342 Krakow, Poland;1. Nishina Center for Accelerator-Based Science, RIKEN, 2-1 Hirosawa, Saitama, Wako 351-0198, Japan;2. Advanced Center for Computing and Communication, RIKEN, 2-1 Hirosawa, Saitama, Wako 351-0198, Japan;3. Department of Nuclear Engineering and Management, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan;4. Nuclear Science and Engineering Center, Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Ibaraki, Tokai 319-1195, Japan;5. Department of Neurosurgery, Himon׳ya Hospital, 2-9-5 Minami, Meguro, Tokyo 152-0013, Japan;6. Graduate School of Engineering, Department of Mechanical Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan;7. Research Center for Charged Particle Therapy, National Institute of Radiological Sciences, 4-9-1 Anagawa, Inage, Chiba 263-8555, Japan;1. Department of Physics, University of Malaya, 50603 Kuala Lumpur, Malaysia;2. School of Engineering, Taylor’s University, 47500 Subang Jaya, Selangor, Malaysia;3. Flexilicate Sdn. Bhd., University of Malaya, 50603 Kuala Lumpur, Malaysia;4. Integrated Lightwave Research Group, Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;5. Clinical Oncology Unit, Faculty of Medicine, University of Malaya, 50603 Kuala Lumpur, Malaysia |
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| Abstract: | The dependence of LiF:Mg,Cu,P samples with various concentrations of Mg on sintering temperatures was investigated to find a new dosimeter. The influence of high sintering temperatures on LiF:Mg,Cu,P chips depends strongly on Mg concentrations. The height of the main peak versus the sintering temperatures exhibits a maximum, the position of which varies between 690 °C and 750 °C, depending on the Mg concentration in the range studied. The high temperature peaks of LiF:Mg,Cu,P for various Mg concentrations reduce basically when the sintering temperature is increased. LiF:Mg,Cu,P is much less sensitive than LiF:Mg,Cu,Si to sintering temperature. LiF:Mg,Cu,P with 0.6 mol% of Mg can be re-used at annealing temperature of 260 °C, regardless of the sintering temperature. It was found that the optimum concentration is Mg: 0.6 mol%, the optimum sintering temperature is 750 °C, considering that LiF:Mg,Cu,P with a low residual signal and good sensitivity can be re-used at annealing temperature of 260 °C and produced in a large scale. The new optimum LiF:Mg,Cu,P formation has 52 times higher than that of the TLD-100, and an extremely low residual signal of 0.07% without an initialization readout procedure. |
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| Keywords: | Thermoluminescence TL LiF:Mg,Cu,P GR-200A LiF:Mg,Cu,Si Stability Residual signal |
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