Brewster’s angle method for absorption coefficient measurement of high-resistivity silicon based on CW THz laser |
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Authors: | S Ding Q Li R Yao Q Wang |
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Institution: | (1) State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People’s Republic of China;(2) Institute of Optics and Electronics Chinese Academy of Sciences, Chengdu, 610209, People’s Republic of China |
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Abstract: | A simple method for measuring the absorption coefficient of low absorbing materials using CW THz laser was put forward. The
method was based on transmittance measurements at the Brewster’s angle for p-polarized light, where the reflectance would
be minimal, so interference caused by multiple reflections in the sample would be eliminated. Numerical simulations were carried
out to evaluate errors in the proposed method. An experiment was also made to measure the absorption coefficient of high-resistivity
Czochralski silicon at 118.83 μm by the method. Based on CW THz laser, the method offers a convenient way to measure the material
absorption coefficient and has a low cost, so it shows promising application prospects. |
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