Band gap variation in co-evaporated AgInSe2 thin films with 1.26 MeV He+ ion irradiation |
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| Authors: | M C Santhosh Kumar and B Pradeep |
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| Institution: | (1) Laboratory of Pharmaceutics, Jiangsu Key Laboratory Molecular and Medical Biotechnology, College of Life Science, Nanjing Normal University, Nanjing, 210046, People’s Republic of China; |
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| Abstract: | Polycrystalline AgInSe2 thin films have been prepared by co-evaporation of individual elements on glass substrate at a high temperature. The samples
were subjected to the irradiation of 1.26 MeV helium ions (He+). Structural properties were investigated by X-ray diffraction and optical studies have been carried out from transmittance
and reflectance measurements. The effect of irradiation on the structural and optical properties has been investigated for
different doses of He+ ions. It is observed that the band gap of silver indium selenide thin films decreases gradually from 1.25 eV to 1.07 eV with
irradiation dose. |
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