Defect annealing in phosphorus implanted silicon: A D.L.T.S. study |
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| Authors: | J Krynicki J C Bourgoin |
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| Institution: | (1) Groupe de Physique des Solides de l'Ecole Normale Supérieure, Université Paris VII, Tour 23. 2 Place Jussieu, F-75221 Paris CEDEX 05, France;(2) Present address: Institute Badan Jadrowych, Swierk, Poland |
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| Abstract: | Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary
results concerning defects introduced by 130 KeV phosphorous ion implantation are described. Four electron traps are found:
atE
c
-0.21 eV,E
c
-0.39 eV,E
c
-0.52 eV andE
c
-0.58 eV and their cross-sections estimated. The annealing behaviour in the range 450–800°C of these traps is described.
Work supported in part by the Institute of Physics, Polish Academy of Science, Warsaw.
Laboratoire associé au C.N.R.S. |
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| Keywords: | 61 70T 61 70E |
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