The electronic structure of the disilavinylidene anion |
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| Affiliation: | 1. Center for Self–assembly and Complexity, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea;2. Department of Chemistry, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea;3. Division of Advanced Materials Science, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea |
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| Abstract: | The electronic structure of the disilavinylidene (H2Si = Si)− anion is investigated with the MC SCF CI and CEPA methods. In addition to the doublet ground state (2B2) with an electron affinity of 1.65 eV, an excited state (4A'') is found which is still stable by about 0.6 eV. |
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