Study of single vibrational level relaxation in CS2(R3B2) by stimulated emission pumping |
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| Institution: | 1. Institute of High Current Electronics, Siberian Branch (SB), Russian Academy of Sciences (RAS), Tomsk 634055, Russia;2. National Research Tomsk State University, Tomsk 634050, Russia;3. National Research Tomsk Polytechnic University, Tomsk 634050, Russia;4. Tomsk State University of Control Systems and Radioelectronics, Tomsk, 634050, Russia |
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| Abstract: | The relaxation of single vibrational levels of CS2(R3B2) has been studied by the stimulated emission pumping technique for the first time. The relaxation rate of the 0,6,0 and 0,8,0 levels is found to be 0.89 × 108 s−1 Torr−1 and 1.2 × 108 s−1 Torr−1 respectively. These values are about an order of magnitude higher than the R3B2 state quenching rate. This is direct experimental evidence that the vibrational relaxation process within this triplet takes place essentially prior to quenching. |
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