| 磁控溅射制备的AlN薄膜的结构、组分及性能分析 |
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| 引用本文： | 席忠红,李海翼. 磁控溅射制备的AlN薄膜的结构、组分及性能分析[J]. 低温与超导, 2012, 0(9): 32-35,39 |
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| 作者姓名： | 席忠红 李海翼 |
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| 作者单位： | 甘肃民族师范学院物理与水电工程系 |
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| 基金项目： | 甘肃民族师范学院院长基金(批准号:11-15)资助 |
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| 摘 要： | 采用DC磁控溅射法,分别在p-Si(111)和玻璃基片上沉积AlN薄膜。利用X射线衍射(XRD)、X射线能谱仪(EDS)、原子力显微镜(AFM)、台阶仪紫外/可见分光光度计和傅里叶变换红外光谱仪(FTIR)分析了薄膜的结构组分、表面形貌、膜厚、光学性能和红外吸收特性。结果表明:溅射电流对AlN薄膜的生成有很大的影响,当电流增加到0.40A时,薄膜中出现明显的h-AlN(100)和AlN(110)衍射峰;样品的最大高度都小于30nm;样品在250-1000nm波长范围内具有较高的透射率,当溅射电流为0.4A时,薄膜的禁带宽度约为5.94eV;在677.12cm-1处出现强烈的吸收峰。
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| 关 键 词： | AlN薄膜 溅射电流 XRD 透射率 FTIR EDS |
The microstructure,component and properties of AlN thin films by magnetron sputtering |
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| Xi Zhonghong,Li Haiyi. The microstructure,component and properties of AlN thin films by magnetron sputtering[J]. Cryogenics and Superconductivity, 2012, 0(9): 32-35,39 |
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| Authors: | Xi Zhonghong Li Haiyi |
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| Affiliation: | (Department of Physics and Hydraulic Engineering,Gansu Normal University for Nationalities, Hezuo 747000,China) |
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| Abstract: | AlN thin films were prepared by DC magnetron reactive sputtering on p-Si(111) and glass substrates.The properties of structure and component,surface morphologies,thickness,optics and infrared spectra of the films were studied by using X-ray diffraction(XRD),X-ray EDS,Atomic force microscopy(AFM),step profilometer,UV-visible spectrophotometer and Fourier transformation infrared spectra(FTIR).It shown that h-AlN(100)and AlN(110) diffraction peak was presented in the samples when the sputtering current added up to 0.40A;the maximum height of thin films was less than 30nm;AlN samples had high transmission in the wave length range of 250-1000nm,its band-gap value was 5.94eV;an intense absorption exited at 677.12cm-1 of wavenumber in the Fourier transformation infrared spectra when the sputtering current was 0.40A. |
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| Keywords: | AlN thin films Sputtering current XRD Transimmission FTIR EDS |
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