发光不衰减的多孔硅

用一种新的方法制备出了具有不同衰减的光致发光特性的多孔硅。如此制备的多孔硅新鲜样品，其发光峰位强度比普通多孔硅高２￣２．５倍，将样品在室温下暴露于空气中，其发光强度在前４个月中单调增加，然后达到饱和。在随后的８个月中，没有观察到发光衰减，发光峰位也没有发生变化，这种发光稳定性被归因子于多孔硅表面所形成的稳定的Ｆｅ－Ｓｉ键。文章探讨了发光不衰减、峰位不蓝移的机理，并为多孔硅发光的量子限域模型提供了强

NONDEGRADING PHOTOLUMINESCENCE IN POROUS SILICON

Porous silicon(PS)with nondegrading photoluminescence (PL)has been prepared by a novel method.For freshly prepared samples,the PL peak intensity is 2 2 5 times stronger than that of normal PS.Upon exposure to ambient air,the PL intensity increases during the first four months and then saturates.No PL degradation is observed after eight months,and the peak position remains unchanged.This PL stability is attributed to the formation of stable Fe-Si bonds on the PS surface.Studies of the mechanism provide strong proof of the quantum confinement model of PS luminescence.