在LPE生长中降温和恒温对InAsPSb外延层组分分布的影响

采用LPE技术,生长出InAsPSb外延层,研究了降温、恒温两种方法对外延层组分分布的影响。结果表明,用恒温方法生长时,外延层中P、Sb组分分布较为均匀,在脉冲电流激发下,得到了3.09μm激光输出。

INFLUENCE OF LOWERING AND CONSTANT TEMPERATURE ON DISTRIBUTION OF P AND Sb IN THE InAsPSb EPITAXY LAYERS GROWN BY LPE

In this paper properties of InAsPSb epitaxy grown using both lowering and constant temperature LPE methods are studied.The solid composition of epitaxial layer was determined by EPMA analysis.The experimental result indicates,that the P and Sb content have almost a contant value for the epilayer grown by the constant temperature LPE method.The diodes were driven by current pulses with 10μs duration and 1 kHz.The laser emission with wavelength 3.09 μm was observed from single heterojunction made of p-InAs0.82P0.12Sb0.06,and n-InAs substrate at 12 K.