首页 | 本学科首页   官方微博 | 高级检索  
     


Quasi-neutral Limit of a Nonlinear Drift Diffusion Model for Semiconductors
Authors:Ingenuin Gasser  Ling HsiaoPeter A. Markowich  Shu Wang
Affiliation:
  • a Fachbereich Mathematik, Universität Hamburg, Bundesstrasse 55, 20146, Hamburg, Germany
  • b Academy of Mathematics and Systems Sciences, CAS, Beijing, 100080, People's Republic of China
  • c Institut für Mathematik, Universität Wien, Boltzmanngasse 9, A-1090, Vienna, Austria
  • Abstract:The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit (zero-Debye-length limit) is determined rigorously by using the so-called entropy functional which yields appropriate uniform estimates.
    Keywords:Quasi-neutral limit   nonlinear drift-diffusion equations   entropy method
    本文献已被 ScienceDirect 等数据库收录!
    设为首页 | 免责声明 | 关于勤云 | 加入收藏

    Copyright©北京勤云科技发展有限公司  京ICP备09084417号