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Effect of nano-carbon dispersions on signal in silicon-based sensor structure with photoelectrical transducer principle
Authors:Anton I Manilov  Aleksey V Kozinetz  Sergiy V Litvinenko  Valeriy A Skryshevsky  Mohammed Al Araimi  Alex Rozhin
Institution:1. Institute of High Technologies, Taras Shevchenko National University of Kyiv, Volodymyrska 64, 01033, Kyiv, Ukraine;2. Corporation Science Park Taras Shevchenko University of Kyiv, Volodymyrska Str., 60, 01033, Kyiv, Ukraine;3. Nanotechnology Research Group, Aston Institute of Photonic Technologies, School of Engineering & Applied Science, Aston University, Aston Triangle, B4 7ET, Birmingham, UK;4. Higher College of Technology, Al-Khuwair, PO Box 74, Postal Code 133, Oman
Abstract:We identified different nano-carbon species such as graphene nanoplatelets, graphite flakes and carbon nanotubes dispersed in N-methyl-2-pyrrolidone using a novel sensor structure based on a “deep” silicon barrier working as a photoelectrical transducer. Each nano-carbon particle has specific signature in both 2D photocurrent distribution and photocurrent dependencies on bias changing surface band-bending. Additionally, all nano-carbon particles have characteristic features in the time-dependent evolution of photocurrent. The obtained results can be explained by the influence of nano-carbon molecules' local electric field on the recombination parameters of defect centers on the silicon surface.
Keywords:Silicon  Photoelectrical sensor  Carbon nanotubes  Graphene
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