具有双栅的部分薄膜LIGBT

本文提出一种新型的具有阴极栅和阳极栅的部分薄膜SOI LIGBT。正向导通状态下，当负压加在阳极栅上时，器件具有低导通电阻。在阻断状态下，阴极栅和阳极栅分别短接在发射极和收集极，导致高开关速度。而且，漂移区以下部分硅衬底的刻蚀避免在埋氧层下界面聚集电荷，这使得电势线可以释放到薄膜以下，因而产生高击穿电压。再有，无衬底-漏极电容使器件具有高开关速度。最后，漂移区横向均匀和线形掺杂相结合的浓度分布不仅提高了耐压，而且降低了导通电阻。与常规LIGBT相比，提出的新结构展示了高电流容量，高开关速度，低导通电阻和2倍的击穿电压。

Double gate lateral IGBT on partial membrane

A new SOILIGBT(lateral insulated-gate bipolar transistor) with cathode-and anode-gates on partial membrane is proposed.A low on-state resistance is achieved when a negative voltage is applied to the anode gate.In the blocking state,the cathode gate is shortened to the cathode and the anode gate is shortened to the anode,leading to a fast switching speed.Moreover,the removal of the partial silicon substrate under the drift region avoids collecting charges beneath the buried oxide,which releases potential lin...