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On the control of thin film growth by angular reflectometry near the brewster angle
Authors:S P Zinchenko  A P Kovtun and G N Tolmachev
Institution:(1) Center for Research in Scientific Computation, Department of Mathematics, North Carolina State University, Raleigh, NC 27695, USA;(2) MIT Lincoln Laboratory, Massachussetts Institute of Technology, 244 Wood Street, Lexington, MA 02420, USA
Abstract:The method of angular reflectometry is used to analyze the formation dynamics of layered structures on transparent substrates. This method is highly sensitive to changes in the parameters of a film structure at the early stage of formation thereof. It is based on the angular dependence of the reflected signal intensity near the Brewster angle and is almost independent of the state of the measuring facility. Experimental data obtained for multiferroic thin films on an isotropic crystalline Al2O3(001) substrate are presented. The films on the Al2O3(001) substrate are obtained by sputtering a Bi0.95Nd0.05FeO3 target for 5–600 s in an rf glow discharge initiated in oxygen.
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