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Tl系超导薄膜金属涂层的生长与特性研究
引用本文:季鲁,阎少林,赵新杰,方兰,李永刚,何明. Tl系超导薄膜金属涂层的生长与特性研究[J]. 低温物理学报, 2007, 29(1)
作者姓名:季鲁  阎少林  赵新杰  方兰  李永刚  何明
作者单位:南开大学电子科学系,天津,300071;南开大学电子科学系,天津,300071;南开大学电子科学系,天津,300071;南开大学电子科学系,天津,300071;南开大学电子科学系,天津,300071;南开大学电子科学系,天津,300071
基金项目:高等学校博士学科点专项科研项目,国家重点基础研究发展计划(973计划),天津市电子薄膜器件与技术重点实验室资助课题
摘    要:我们研究了Tl-2212超导薄膜在带有YSZ/CeO2缓冲层和带有CeO2/YSZ/CeO2缓冲层的Ni金属RABiTS基带上的生长情况.基带上的缓冲层是采用PLD方法制备的,Tl-2212薄膜的制备采用了磁控溅射和后热处理两步方法.XRD 实验结果表明,Tl-2212薄膜都具有很好的C轴垂直于膜面的织构,并具有双向外延生长特性.在CeO2/YSZ/CeO2/Ni基带上制作的Tl-2212薄膜的Tc达到102.8 K,Jc(77 K,0 T)达到2.6 MA/cm2;在YSZ/CeO2/Ni基带上薄膜Tc可达97.7 K,Jc(77 K,0 T)也可以达到0.45 MA/cm2.

关 键 词:Tl-2212  RABTiS  缓冲层  YSZ  CeO2

GROWTH AND PROPERTIES OF Tl-BASED SUPERCONDUCTING FILM COATED CONDUCTORS
Ji Lu,Yan Shao-lin,Zhao Xin-jie,Fang Lan,Li Yong-gang,He Ming. GROWTH AND PROPERTIES OF Tl-BASED SUPERCONDUCTING FILM COATED CONDUCTORS[J]. Chinese Journal of Low Temperature Physics, 2007, 29(1)
Authors:Ji Lu  Yan Shao-lin  Zhao Xin-jie  Fang Lan  Li Yong-gang  He Ming
Abstract:Preparation and properties of Tl-2212 thin films on YSZ/CeO2 buffered and CeO2/YSZ/CeO2 buffered Ni RABiTS have been studied,respectively. The buffer layers were prepared using PLD method. Tl-2212 thin films were fabricated by magnetron sputtering and post-annealing process. XRD experimental results improved that the Tl-2212 thin films were epitaxial growth on both of the buffered RABiTS. The Tc of 102.8 K and Jc(77 K, 0T) of 2 MA/cm2 could be obtained for the Tl-2212 thin film on the RABiTS with CeO2/YSZ/CeO2 layer. Tc of 97.7 K and Jc(77 K, 0T) of 0.45 MA/cm2 could be obtained for the film on the RABiTS with YSZ/CeO2 layer.
Keywords:Tl-2212  RABTiS  YSZ  CeO2
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