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Features of phase formation of Er2O3 films during electron-beam evaporation |
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| Authors: | N R Aghamalyan R K Hovsepyan E A Kafadaryan R B Kostanyan S I Petrosyan G H Shirinyan A Kh Abduev A Sh Asvarov |
| Institution: | 1. Institute for Physical Research, NAS of Armenia, Ashtarak, Armenia 2. Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala, Russia |
| Abstract: | Crystalline Er2O3 films on sapphire and silicon substrates have been prepared by electron beam evaporation technique in vacuum. Preparation of a single-phase erbium oxide film with a cubic lattice and preferred (400) orientation was achieved by means of growth rate decrease. Structural and optical properties of obtained films before and after short-time annealing were investigated. It is shown that the preparation of a single-phase erbium oxide film with a cubic lattice and preferred (222) orientation can be achieved by post-growth annealing of the films grown at usual rates. |
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