| 有源层溅射温度对非晶铟镓锌氧薄膜晶体管电学特性的影响 |
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| 引用本文： | 吴杰,施俊斐,董承远,邹忠飞,陈宇霆,周大祥,胡哲,詹润泽.有源层溅射温度对非晶铟镓锌氧薄膜晶体管电学特性的影响[J].半导体学报,2014,35(1):014003-6. |
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| 作者姓名： | 吴杰 施俊斐 董承远 邹忠飞 陈宇霆 周大祥 胡哲 詹润泽 |
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| 作者单位： | [1]Center for Opto-Electronic Materials and Devices, National Engineering Lab of TFT-LCD Materials and Technologies,Shanghai Jiao Tong University, Shanghai 200240, China [2]Infovision Optoelectronics （Kunshan） Co., Ltd, Kunshan 215300, China |
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| 基金项目： | 973项目(批准号： 2013CB328803) 和中国国家自然科学基金会(批准号： 61136004) |
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| 摘 要： | The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO （a-IGZO） thin film transistors （TFTs） is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as ＂optimized-annealed＂ are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150℃ while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and Ols spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films, Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature.
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| 关 键 词： | 薄膜晶体管 沉积温度 电性能 有源层 非晶 场效应迁移率 TFT器件 溅射 |
Effect of active layer deposition temperature on the performance of sputtered amorphous In-Ga-Zn-O thin film transistors |
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| Wu Jie,Shi Junfei,Dong Chengyuan,Zou Zhongfei,Chen Yuting,Zhou Daxiang,Hu Zhe and Zhan Runze.Effect of active layer deposition temperature on the performance of sputtered amorphous In-Ga-Zn-O thin film transistors[J].Chinese Journal of Semiconductors,2014,35(1):014003-6. |
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| Authors: | Wu Jie Shi Junfei Dong Chengyuan Zou Zhongfei Chen Yuting Zhou Daxiang Hu Zhe and Zhan Runze |
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| Institution: | Center for Opto-Electronic Materials and Devices, National Engineering Lab of TFT-LCD Materials and Technologies, Shanghai Jiao Tong University, Shanghai 200240, China;Center for Opto-Electronic Materials and Devices, National Engineering Lab of TFT-LCD Materials and Technologies, Shanghai Jiao Tong University, Shanghai 200240, China;Center for Opto-Electronic Materials and Devices, National Engineering Lab of TFT-LCD Materials and Technologies, Shanghai Jiao Tong University, Shanghai 200240, China;Infovision Optoelectronics (Kunshan) Co., Ltd, Kunshan 215300, China;Center for Opto-Electronic Materials and Devices, National Engineering Lab of TFT-LCD Materials and Technologies, Shanghai Jiao Tong University, Shanghai 200240, China;Center for Opto-Electronic Materials and Devices, National Engineering Lab of TFT-LCD Materials and Technologies, Shanghai Jiao Tong University, Shanghai 200240, China;Center for Opto-Electronic Materials and Devices, National Engineering Lab of TFT-LCD Materials and Technologies, Shanghai Jiao Tong University, Shanghai 200240, China;Center for Opto-Electronic Materials and Devices, National Engineering Lab of TFT-LCD Materials and Technologies, Shanghai Jiao Tong University, Shanghai 200240, China |
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| Abstract: | thin film transistors amorphous oxide semiconductors magnetron sputtering deposition temperature |
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| Keywords: | thin film transistors amorphous oxide semiconductors magnetron sputtering deposition temperature |
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