Modulation of millimeter-waves using diode laser illumination of a silicon waveguide

A quantitative study of the phase and/or amplitude modulation of millimeter-waves by a diode laser is reported. Using millimeter-waves as a probe, the transport properties of an optically induced electron-hole plasma in a bulk silicon waveguide may be measured. A theoretical model has been developed to predict the temporal behavior of the plasma in the case of low level optical injection. This model agrees well with the measured data.