Fluorophenyl derivatives of elements II-VI groups |
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| Authors: | L N Zelenina T P Chusova Yu G Stenin V V Bakovets |
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| Institution: | (1) Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Sciences, Ac. Lavrentyev Prospect 3, 630090 Novosibirsk, Russia;(2) Novosibirsk State University, Pirogova street 2, 630090 Novosibirsk, Russia |
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| Abstract: | The enthalpies and temperatures of melting of RSi(CH3)3, R4Si, R3P, R3As, R3Sb, R3Bi, R2Te and R2Hg (R=C6F5) were obtained by scanning calorimetry measurements. The pressure of the saturated and unsaturated vapors of RSi(CH3)3, R2Si(CH3)2, R4Si, R3Ga, R3P, R3As, R3Sb, R3Bi, R2Te and R2Hg has been measured by the static method with a membrane-gauge manometer. It was established that all investigated substances
proceeded to vapor as monomers. Equations approximating the dependences of saturated vapor pressures on temperature and the
enthalpies and entropies of vaporization were obtained. Grafite films with silicon intercalated up to 25 at.% were grown by
CVD using R4Si as a precursor. These films showed semiconductor properties in the temperature interval 80–300 K. |
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| Keywords: | CVD enthalpy entropy fluorophenyl derivatives scanning calorimetry static method with a membrane-gauge manometer |
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