等离子体还原SiCl4一步法制备多晶硅实验研究

区别于改良西门子法、硅烷法、碳热还原法、区域熔炼法等多晶硅生产工艺,利用等离子体技术,建立了以硅的氯化物为原料,一步法制备多晶硅的实验装置和工艺流程,并在此基础上进行了粒状多晶硅制备的实验.实验表明,SiCl4单程转化率超过70;,多晶硅选择性60;.利用XRD、SEM、AS等分析手段,对所得产物进行了表征.与纯度为7个9的多晶硅标样的比较表明,实验产物达到了太阳能级.此方法为多晶硅生产极大地放宽了原料选择条件,为低成本生产太阳能级多晶硅提供了一种新的途径.

Silicon Tetrachloride Direct Reduction to Polysilicon in the Plasma System

Different from some polysilicon producing processes such as trichlorosilane decomposition in Siemens-type reactor,silane reduced in fluidized bed reactor,carbothermal reduction and the directional solidification,a new experimental equipment was set up to reduce the silicon chloride to polysilicon by one-step process with the plasma technology.And the experiment results show that the percent conversion of SiCl4 exceeded 70%,and the selectivity of polysilicon production was 60%.The production and a polysilicon swatch with a purity of 99.99999% were analyzed by XRD,SEM and AS.Through comparing with each other,it was verified that the characteristics of the product has reached the solar grade.These experimental results provide a new route,which broaden the choice of raw materials for polysilicon production.