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Interface-related effects on confined excitons in GaAs/AlxGa1−xAs single quantum wells |
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| Authors: | E. C. Ferreira J. A. P. da Costa J. A. K. Freire G. A. Farias V. N. Freire |
| Affiliation: | a Departamento de Física, Universidade Federal do Rio Grande do Norte, Campus Universitário, 59072-970 Natal, Rio Grande do Norte, Brazil b Departamento de Física, Universidade Federal do Ceará, Centro de Ciências Exatas, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceará, Brazil |
| Abstract: | Confined excitons in non-abrupt GaAs/AlxGa1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces. |
| Keywords: | Quantum well Binding energy Exciton Interface effects |
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