硅单晶中硅氢键的存在及其影响

通过红外吸收光谱的测定,证实了氢气氛浮区硅单晶中存在硅氢键,三个特征吸收峰在4.51,4.68和5.13μm波长处。根据有关的理论计算报道分析,认为氢原子在硅晶格中处于几种间隙位置。研究表明这种在晶体生长中形成的硅氢键对晶体完整性隐含着影响,并发现硅单晶中氢致缺陷的形成与硅氢键在高温下的断裂有密切关系。关键词：

THE PRESENCE OF Si-H BONDS IN Si SINGLE CRYSTALS AND ITS INFLUENCES

The presence of Si-H bonds in hydrogen FZ silicon single crystals was confirmed by measurements of infrared absorption spectrum. Three characteristic absorption peaks were found at 4.51, 4.68 and 5.13 μm. By analysing theoretical calculations, it is believed that hydrogen atoms in silicon lattice are situated on several interstitial sites. Investigation showed that the Si-H bonds formed in crystal growth influences implicitly on the crystal perfection, and it was discovered that there exists a close relationship between the production, of defects by hydrogen and the breakdown of hydrogen-associated bonds at high temperature.