Visible (683 to 713 nm) room-temperature AlGaAs vertical cavity surface emitting lasers (VCSELs)

We compare the materials parameters for visible emitting, vertical cavity surface emitting lasers (VCSELs) and conclude that AlGaAs-based materials are a good choice. All-AlGaAs devices were produced by metalorganic vapour phase epitaxy (MOVPE) growth using ultra-high purity source reagents. Lasing was obtained at wavelengths in the range of 683 to 713 nm using four 45 Å wide Al_0.18Ga_0.82 As quantum wells in the active region. A threshold current density of 3.8 kA cm⁻² was measured for a cavity wavelength of 692 nm at room temperature. Growth of the epitaxial mirrors at 5.2 μm/h results in a total device growth time of only two and a half hours.