| 微氮直拉硅单晶中氧化诱生层错透射电镜研究 |
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| 引用本文： | 徐进,杨德仁,储佳,马向阳,阙端麟. 微氮直拉硅单晶中氧化诱生层错透射电镜研究[J]. 物理学报, 2004, 53(2): 550-554 |
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| 作者姓名： | 徐进 杨德仁 储佳 马向阳 阙端麟 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州 310027 |
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| 基金项目： | 国家自然科学重点基金（批准号：50032010）和国家863项目(批准号：2002AA31)资助的课题. |
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| 摘 要： | 利用透射电镜研究了热氧化过程中含氮（NCZ）和不含氮（CZ）直拉硅单晶的氧化诱生缺陷.研究表明，NCZ中的氧化诱生层错的尺寸随着湿氧氧化时间的延长而减小，并有冲出型位错产生.而在CZ中，生成了大量的多面体氧沉淀，并且随着热氧化时间的延长，层错的尺寸逐渐增大.关键词：直拉硅透射电镜氧化诱生层错
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| 关 键 词： | 直拉硅 透射电镜 氧化诱生层错 |
| 收稿时间： | 2002-12-13 |
Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope |
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| Xu Jin,Yang De-Ren,Chu Ji,Ma Xiang-Yang and Que Duan-Lin. Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope[J]. Acta Physica Sinica, 2004, 53(2): 550-554 |
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| Authors: | Xu Jin Yang De-Ren Chu Ji Ma Xiang-Yang Que Duan-Lin |
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| Abstract: | The extended-defects generated during oxidation in both of nitrogen-doped Czochralski (NCZ) silicon and common Czochralski (CZ) silicon have been investigated by Transmission Electron Microscopy(TEM). It is found that the size of the oxidation-induced stacking faults (OSFs) decreases with the increase of oxidation time in NCZ silicon, and punched-out dislocations could also be observed. While in CZ silicon, there are many polyhedral oxygen precipitates generated, and the size of OSFs increases with increasing oxidation time. |
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| Keywords: | silicon TEM OSF |
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