| Ge/Si(111)与Si/Ge(111)体系的生长特性与表面再构研究 |
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| 引用本文： | 陈可明,周国良,盛篪,蒋维栋,张翔九.Ge/Si(111)与Si/Ge(111)体系的生长特性与表面再构研究[J].物理学报,1990,39(4):599-606. |
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| 作者姓名： | 陈可明 周国良 盛篪 蒋维栋 张翔九 |
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| 作者单位： | 复旦大学表面物理实验室,上海,200433;复旦大学表面物理实验室,上海,200434;复旦大学表面物理实验室,上海,200435;复旦大学表面物理实验室,上海,200436;复旦大学表面物理实验室,上海,200437 |
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| 摘 要： | 本文利用RHEED和AES对Ge/Si(111)和Si/Ge(111)体系的生长特性与表面再构进行了研究。由此提出了其生长模式,并讨论了应力对生长特性、界面特性和表面再构的作用。
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THE GROWTH CHARACTERISTICS AND SURFACE RECONS-TRUCTION OF Ge/Si (111) AND Si/Ge(111) |
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| CHEN KE-MING,ZHOU GUO-LIANG,SHENG CHI,JIANG WEI-DONG and ZHANG XIANG-JIU.THE GROWTH CHARACTERISTICS AND SURFACE RECONS-TRUCTION OF Ge/Si (111) AND Si/Ge(111)[J].Acta Physica Sinica,1990,39(4):599-606. |
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| Authors: | CHEN KE-MING ZHOU GUO-LIANG SHENG CHI JIANG WEI-DONG and ZHANG XIANG-JIU |
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| Abstract: | The growth characteristics and surface reconstruction of Ge/Si(lll) and Si/Ge(lll) are studied by reflection high energy electron diffraction (RHEED) and Auger electron spectros-copy (AES). The growth modes are proposed based on the results. The stain effects on the growth characteristics, interface structure and surface reconstruction are further discussed. |
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