Large-Scale Synthesis of Graphene Films by Joule-Heating-Induced Chemical Vapor Deposition |
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Authors: | Jung Min Lee Hae Yong Jeong Won Il Park |
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Institution: | (1) Key Laboratory of Functional Polymer Materials and Center for Nanoscale Science & Technology, Institute of Polymer Chemistry, College of Chemistry, Nankai University, Tianjin, 300071, China; |
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Abstract: | We report large-area synthesis of few-layer graphene films by chemical vapor deposition (CVD) in a cold-wall reactor. The
key feature of this method is that the catalytic metal layers on the SiO2/Si substrates are self-heated to high growth temperature (900°C to 1000°C) by high-current Joule heating. Synthesis of high-quality
graphene films, whose structural and electrical characteristics are comparable to those grown by hot-wall CVD systems, was
confirmed by transmission electron microscopy images, Raman spectra, and current–voltage analysis. Optical transmittance spectra
of the graphene films allowed us to estimate the number of graphene layers, which revealed that high-temperature exposure
of Ni thin layers to a carbon precursor (CH4) was critical in determining the number of graphene layers. In particular, exposure to CH4 for 20 s produces very thin graphene films with an optical transmittance of 93%, corresponding to an average layer number
of three and a sheet resistance of ~600 Ω/square. |
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Keywords: | |
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