Morphology-to-properties correlations in anodic porous InP layers

In this paper, we investigate the properties of porous structures anodically grown onto n-InP (100) in HCl. In situ electrochemical characterizations show the pore morphology strongly influences the properties of the InP surfaces. Both dc- and ac-electrochemical measurements reveal an enhancement of the capacitive current and a modification of the electronic distribution at the interface. Photocurrent spectra performed during the pore growth are also strongly modified. For low anodic charges, an increase of the photocurrent with a redshift of the absorption edge is measured. These evolutions can be respectively ascribed (i) to a reflection decrease due to a surface roughening and (ii) to the creation of surface states within the band gap. For higher anodic charges, the photocurrent drops with a narrowing of the spectrum. Using a model based on the “dead” layer, the porous layer is considered as an absorbent film that progressively attenuates the photocurrent of the bulk semiconductor.