| Effect of ionizing radiation on dual 8-bit analog-to-digital converters （AD9058） with various dose rates and bias conditions |
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| 引用本文： | 李兴冀,刘超铭,孙中亮,肖立伊,何世禹.Effect of ionizing radiation on dual 8-bit analog-to-digital converters （AD9058） with various dose rates and bias conditions[J].中国物理 B,2013(9):629-633. |
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| 作者姓名： | 李兴冀 刘超铭 孙中亮 肖立伊 何世禹 |
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| 作者单位： | [1]Department of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China [2]Department of Astronautics, Harbin Institute of Technology, Harbin 150001, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant No. 11205038） and the China Postdoctoral Science Foundation （Grant No. 2012M510951）. |
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| 摘 要： | The radiation effects on several properties （reference voltage, digital output logic voltage, and supply current） of dual 8-bit analog-to-digital （A/D） converters （AD9058） under various biased conditions are investigated in this paper. Gamma ray and 10-MeV proton irradiation are selected for a detailed evaluation and comparison. Based on the measurement results induced by the gamma ray with various dose rates, the devices exhibit enhanced low dose rate sensitivity （ELDRS） under zero and working bias conditions. Meanwhile, it is obvious that the ELDRS is more severe under the working bias condition than under the zero bias condition. The degradation of AD9058 does not display obvious ELDRS during 10-MeV proton irradiation with the selected flux.
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| 关 键 词： | 数字转换器 偏置条件 低剂量率 电离辐射 双通道 模拟 参考电压 质子辐照 |
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