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Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET |
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| Authors: | Zahra Ahangari Morteza Fathipour |
| Institution: | [1]Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, lran [2]School of Electrical and Computer Engineenng, University of Tehran, Tehran, Iran |
| Abstract: | band structure, quantum confinement effects, resonant tunneling, Schottky MOSFET |
| Keywords: | band structure quantum confinement effects resonant tunneling Schottky MOSFET |
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