RF磁控溅射法在Si衬底上生长ZnO薄膜界面的XPS研究

采用RF磁控溅射方法在Si衬底上生长ZnO薄膜. XRD测量结果表明, ZnO薄膜为c轴择优取向生长的. 对ZnO薄膜进行了XPS深度剖析及测试. 测试结果表明, 在未达到界面时ZnO均符合正化学计量比, 是均匀的单相膜, 表明该方法具有较好的成膜特性. 在界面处, Zn的俄歇修正型的化学位移及俄歇峰峰型的变化、 Zn_2p3/2与Zn_LMM峰积分面积比值的变化、 Si_2p峰 的非对称性, 均表明Si与ZnO的界面处有明显的成键作用. 在界面处, n型Si反型为p型.

XPS Research of ZnO Thin Films Grown by RF Reactive Magnetron Sputtering

A ZnO thin film was grown on substrate Si by RF reactive magnetron sputtering. The (X-ray) diffraction (XRD) pattern of the sample shows a sharp diffraction peak for ZnO(002), which indicates that as-sputtered film is highly c-axis oriented. In the experiment, we made the profile of depth, measured ZnO in the various depths, and did qualitative and quantitative calculation. The results indicate the sample is uniform unitary phase consistent the positive stoichiometric ratio before etch reaching the interface, which shows this method could be employed to grow films well. But on the interface, the chemical shift of Zn Auger modify shape, the change of Zn Auger peak shape, the ratio of (Zn_(2p_(3/2))) and (Zn_(LMM)) peaks' integral areas, the asymmetry of (Si_(2p)) peak all show the effect of forming the bond on the interface of Si and ZnO. And n-Si is changed into p-Si on the interface.