Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer |
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Authors: | Wu Yu-Xin Zhu Jian-Jun Chen Gui-Feng Zhang Shu-Ming Jiang De-Sheng Liu Zong-Shun Zhao De-Gang Wang Hui Wang Yu-Tian and Yang Hui |
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Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Institute of Information Function Materials, Hebei University of Technology, Tianjin 300130, China; Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China |
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Abstract: | We present the growth of GaN epilayer on Si (111)
substrate with a single AlGaN interlayer sandwiched between the GaN
epilayer and AlN buffer layer by using the metalorganic chemical
vapour deposition. The influence of the AlN buffer layer thickness
on structural properties of the GaN epilayer has been investigated
by scanning electron microscopy, atomic force microscopy, optical
microscopy and high-resolution x-ray diffraction. It is found that
an AlN buffer layer with the appropriate thickness plays an important
role in increasing compressive strain and improving crystal quality
during the growth of AlGaN interlayer, which can introduce a more
compressive strain into the subsequent grown GaN layer, and
reduce the crack density and threading dislocation density in GaN
film. |
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Keywords: | GaN Si (111) substrate metalorganic chemical vapour deposition AlN buffer layer AlGaN interlayer |
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