| A novel wide-dynamic-range logarithmic-response bipolar junction photogate transistor for CMOS imagers |
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| 引用本文： | 金湘亮,陈杰,仇玉林. A novel wide-dynamic-range logarithmic-response bipolar junction photogate transistor for CMOS imagers[J]. 中国光学快报(英文版), 2003, 1(8) |
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| 作者姓名： | 金湘亮 陈杰 仇玉林 |
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| 作者单位： | Microelectronics R&D Center，Chinese Academy of Sciences，Beijing 100029，Microelectronics R&D Center，Chinese Academy of Sciences，Beijing 100029，Microelectronics R&D Center，Chinese Academy of Sciences，Beijing 100029 |
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| 摘 要： | In this paper, a new photodetector, bipolar junction photogate transistor (BJPG), is proposed for CMOS imagers. Due to an injection p+n junction introduced, the photo-charges drift through the p+n junction by the applied electronic field, and on the other hand, the p+n junction injects the carriers into the channel to carry the photo-charges. Therefore this device can increase the readout rate of the pixel signal charges and the photoelectron transferring efficiency. Using this new device, a new type of logarithmic pixel circuit is obtained with a wide dynamic range which makes photo-detector more suitable for imaging the naturally illuminated scenes. The simulations show that the photo current density of BJPG increases logarithmically with the incident light power due to the introduced injection p+n junction. The noise characteristics of BJPG are analyzed in detail and a new gate-induced noise is proposed. Based on the established numerical analytical model of noise, the power spectrum density curves a
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A novel wide-dynamic-range logarithmic-response bipolar junction photogate transistor for CMOS imagers |
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| Abstract: | In this paper, a new photodetector, bipolar junction photogate transistor (BJPG), is proposed for CMOSimagers. Due to an injection p+n junction introduced, the photo-charges drift through the p+n junction bythe applied electronic field, and on the other hand, the p+n junction injects the carriers into the channel tocarry the photo-charges. Therefore this device can increase the readout rate of the pixel signal charges andthe photoelectron transferring efficiency. Using this new device, a new type of logarithmic pixel circuit isobtained with a wide dynamic range which makes photo-detector more suitable for imaging the naturallyilluminated scenes. The simulations show that the photo current density of BJPG increases logarithmicallywith the incident light power due to the introduced injection p+n junction. The noise characteristics ofBJPG are analyzed in detail and a new gate-induced noise is proposed. Based on the established numericalanalytical model of noise, the power spectrum density curves are simulated. |
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