Simulation of fractal cluster growth on a substrate under ion bombardment

Ion-stimulated growth of a fractal cluster on the substrate is simulated in regimes that are intermediate between diffusion- and reaction-limited aggregations. It is shown that the fractal dimension of a growing cluster and the type of formed epitaxial structure are due to the sequence of ion-stimulated processes with different fractal dimensions. The algorithm for revealing the ion stimulation mechanism of processes based on fractal laws is proposed.