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The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots |
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| Authors: | N Sellami A Sahli C Testelin |
| Institution: | a Unité de Recherche de Physique des Semiconducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Techniques, La Marsa 2070, Tunisia b Institut des NanoSciences de Paris, Campus Boucicaut, Universités Paris 6 et 7, CNRS, UMR7588, 140 rue de Lourmel, 75015 Paris, France c Laboratoire de Photonique et Nanostructures, CNRS, UPR 20, France |
| Abstract: | In this paper, we present a study of photoluminescence (PL) from AlInAs/AlGaAs quantum dots (QDs) structures grown by molecular beam epitaxy. Specifically, we describe the effects of the temperature and of the excitation density on the photoluminescence circular polarization. We have found that the circular polarization degree depends on temperature. On the other hand, the study of the excitation density dependent circular polarization PL degree shows that the last increases in the case of the sample of weak dot density. However, in the case of large dot density, it is almost constant in the excitation density range from 0.116 W cm−2 to 9 W cm−2. |
| Keywords: | 78 20 Ls 78 47 +p 78 55 Cr 78 66 Fd 78 67 Hc |
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