Superstructure phase transitions in Ge on Si (111) at the initial stage of epitaxial growth |
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Authors: | S. A. Teys E. M. Trukhanov A. S. Ilin A. V. Kolesnikov |
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Affiliation: | 1.Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia |
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Abstract: | The surface phase transitions 7 × 7 → 5 × 5 for two-dimensional and c2 × 8 →7 × 7 and 7 × 7 → c2 × 8 for three-dimensional Ge islands epitaxially grown on Si(111) were found experimentally using scan- ning tunneling microscopy. The first two transitions are associated with an increase in the level of misfit strains, while the last is related to a decrease in the stress level during plastic relaxation. |
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