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Free-to-bound radiative recombination in highly conducting InN epitaxial layers |
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| Authors: | B Arnaudov T Paskova PP Paskov B Magnusson E Valcheva B Monemar H Lu WJ Schaff H Amano I Akasaki |
| Institution: | aFaculty of Physics, Sofia University, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria;bDepartment of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden;cDepartment of Electrical and Computer Engineering, Cornell University, Ithaka, NY 14583, USA;dDepartment of Electrical and Electronic Engineering, Meijo University, I-501 Shiogamaguchi, Tempaku-ku, Nagoia 468, Japan |
| Abstract: | We present a theoretical simulation of near-band-edge emission spectra of highly conducting n-InN assuming the model of ‘free-to-bound’ radiative recombination (FBRR) of degenerate electrons from the conduction band with nonequilibrium holes located in the valence band tails. We also study experimental photoluminescence (PL) spectra of highly conducting InN epitaxial layers grown by MBE and MOVPE with electron concentrations in the range (7.7×1017–6×1018) cm−3 and find that the energy positions and shape of the spectra depend on the impurity concentration. By modeling the experimental PL spectra of the InN layers we show that spectra can be nicely interpreted in the framework of the FBRR model with specific peculiarities for different doping levels. Analyzing simultaneously the shape and energy position of the InN emission spectra we determine the fundamental bandgap energy of InN to vary between Eg=692 meV for effective mass mn0=0.042m0 and Eg=710 meV for mn0=0.1m0. |
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