Maximum of the mobility of two-dimensional electrons upon scattering by a correlated distribution of impurity ions

The concentration dependences of the mobility of two-dimensional electrons in heterostructures with selective doping are investigated. Correlations of impurity ions in the volume of the doped layer are considered. The structure factor, which characterizes the influence of correlations in the arrangement of scatterers on the electron mobility, is described by the analytical expression derived in the framework of the hard-sphere model. The effect of oscillations of the structure factor on the electron mobility is evaluated.