Low-order modeling and dynamic characterization of rapid thermal processing |
| |
Authors: | C. D. Schaper Y. M. Cho T. Kailath |
| |
Affiliation: | (1) Department of Electrical Engineering, Stanford University, 94305 Stanford, CA, USA |
| |
Abstract: | A low-order model of rapid thermal processing (RTP) of semiconductor wafers is derived. The first-principles nonlinear model describes the static and dynamic thermal behavior of a wafer with approximate spatial temperature uniformity undergoing rapid heating and cooling in a multilamp RTP chamber. The model is verified experimentally for a range of operating temperatures from 400° C to 900° C and pressures of 1 Torr and 1 atmosphere in an inert N2 environment. Theoretical predictions suggest model validity over a still wider range of operating conditions. One advantage of the low-order model over previous high-order and statistical models is that the proposed model contains a small number of fundamental parameters and functions that, if necessary, are easily identifiable. Furthermore, because of reduced computational complexity, the low-order model can be used in real-time predictive applications including signal processing and process control design. In studying and verifying the model, the dynamic behavior of a semiconductor wafer undergoing rapid temperature changes is characterized. Close comparison between theory and experiment in terms of the wafer eigenvalue and dc gain is demonstrated; the strong nonlinear effects of temperature are shown. Convective heat transfer losses are also examined and are shown to increase with radial position on the wafer. |
| |
Keywords: | 81.40 |
本文献已被 SpringerLink 等数据库收录! |
|