Engineering silicon-based photonic crystal cavities for NV-center quantum information processing |
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Authors: | C. A. Foell A. M. Zagoskin J. F. Young |
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Affiliation: | (1) Institute for Computation in Molecular and Materials Science and Department of Chemistry, Nanjing University of Science and Technology, Nanjing, 210094, China |
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Abstract: | Silicon slab photonic crystal micro cavities designed for of-resonant coupling to nitrogen vacancy (NV) centers were simulated and fabricated. FDTD-simulations show the partial density of states spectrally near the NV-center electric dipole transition can be tuned to reduce decoherence of an excited NV-center despite this transition being above the silicon electronic band gap. The partial density of states at the NV-center transition can be made to dip below half of the free-space partial density of states without significantly affecting the cavity mode quality factor. These promising results sustain the merits of using silicon as a base photonic crystal material for quantum information processing even when integrated emitters radiate above the electronic band gap of silicon. |
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