Thermal diffusivity measurement of low-k dielectric thin film by temperature wave analysis |
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Authors: | Junko Morikawa Toshimasa Hashimoto |
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Institution: | Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan |
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Abstract: | Thermal diffusivity of thin film with low dielectric constant (k), what is called low-k dielectric thin film, 0.31-1.14 μm, including hydrogen-silsesquioxane (HSQ), methyl-silsesquioxane (MSQ), and poly(arylen ether) was examined by temperature wave analysis. The phase shift of temperature wave was observable up to 100 kHz. Thermal diffusivity of HSQ was 4.7 × 10−7 m2 s−1, on the other hand it was not higher than 1.1 × 10−7 m2 s−1 for MSQ or poly(arylen ether) at room temperature. Temperature dependence of thermal diffusivity/thermal conductivity of MSQ was obtained, thermal diffusivity decreased but thermal conductivity increased in a heating scan at 30-150 °C. It was shown that the thermal diffusivity of low-k thin film was correlated with the chemical and the physical structures, the latter was formed in the spin-coating and the curing process. |
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Keywords: | Low-k dielectric thin film Thermal diffusivity Thermal conductivity Temperature wave analysis Spin-coating |
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