Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons

The radiation effects of the metal-oxide-semiconductor(MOS) and the bipolar devices are characterised using 8~MeV protons,60~MeV Br ions and 1~MeV electrons. Key parameters are measured {itin-situ} and compared for the devices. The ionising and nonionisingenergy losses of incident particles are calculated using the Geant4and the stopping and range of ions in matter code. The results ofthe experiment and energy loss calculation for different particlesshow that different incident particles may give differentcontribution to MOS and bipolar devices. The irradiation particles,which cause larger displacement dose within the same chip depth ofbipolar devices at a given total dose, would generate more severedamage to the voltage parameters of the bipolar devices. On thecontrary, the irradiation particles, which cause larger ionisingdamage in the gate oxide, would generate more severe damage to MOSdevices. In this investigation, we attempt to analyse thesensitivity to radiation damage of the different parameter of theMOS and bipolar devices by comparing the irradiation experimentaldata and the calculated results using Geant4 and SRIM code.