| Intraband Relaxation and Its Influences on Quantum Dot Lasers |
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| 作者姓名： | 邓盛凌 黄永箴 于丽娟 |
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| 作者单位： | StateKeyLaboratoryonIntegratedOptoelectronics,InstituteofSemiconductors,ChineseAcademyofSciences,POBox912,Beijing100083 |
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| 摘 要： | A comprehensive two-level numerical model is developed to describe carrier distribution in a quantum-dot laser. Light-emission spectra with different intraband relaxation rates (2 ps, 7.5 ps and 20 ps) are calculated and analysed to investigate the influence of relaxation rates on performance of the quantum-dot laser. The results indicate that fast intraband relaxation favours not only the ground state single mode operation but also the higher injection efficiency.
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| 关 键 词： | 激光技术 量子论 数字模型 光谱学 |
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