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Intraband Relaxation and Its Influences on Quantum Dot Lasers
作者姓名:邓盛凌 黄永箴 于丽娟
作者单位:StateKeyLaboratoryonIntegratedOptoelectronics,InstituteofSemiconductors,ChineseAcademyofSciences,POBox912,Beijing100083
摘    要:A comprehensive two-level numerical model is developed to describe carrier distribution in a quantum-dot laser. Light-emission spectra with different intraband relaxation rates (2 ps, 7.5 ps and 20 ps) are calculated and analysed to investigate the influence of relaxation rates on performance of the quantum-dot laser. The results indicate that fast intraband relaxation favours not only the ground state single mode operation but also the higher injection efficiency.

关 键 词:激光技术 量子论 数字模型 光谱学
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