Triplet-to-singlet exciton formation in poly(p-phenylene-vinylene) light-emitting diodes |
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Authors: | Lin L C Meng H F Shy J T Horng S F Yu L S Chen C H Liaw H H Huang C C Peng K Y Chen S A |
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Affiliation: | Institute of Physics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China. |
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Abstract: | The triplet to singlet exciton formation ratio in a MEH-PPV light-emitting diode is measured by comparing the triplet-induced absorptions with optical and electric excitations at the same singlet exciton density. The ratio is a strong universal decreasing function of the averaged electric field. Using 4 ns for singlet to triplet intersystem crossing time, the ratio is significantly larger than the spin-independent value 3 at intermediate field but is reduced to about 2 for higher field. |
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