| 金属/多孔硅/单晶硅(M/PS/Si)微结构的电学特性 |
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| 引用本文： | 孙鹏,胡明,刘博,孙凤云,许路加.金属/多孔硅/单晶硅(M/PS/Si)微结构的电学特性[J].物理学报,2011,60(5):57303-057303. |
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| 作者姓名： | 孙鹏 胡明 刘博 孙凤云 许路加 |
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| 作者单位： | 天津大学电子信息工程学院,天津 300072 |
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| 基金项目： | 国家自然科学基金(批准号:60771019)资助的课题. |
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| 摘 要： | 采用双槽电化学腐蚀法制备多孔硅层,然后在多孔硅表面沉积形成金属电极,制备出M/PS/Si微结构.利用SEM分析多孔硅的表面形貌,通过测试其I-V特性分析M/PS/Si微结构的电学特性.结果表明:由Pt做电极形成的M/PS/Si结构,表现出非整流特性.M/PS/Si结构的I-V曲线由线性区和非线性区组成,多孔硅孔隙率越高的M/PS/Si结构的I-V特性曲线线性区越宽.由Cu做电极形成的M/PS/Si结构,表现出整流特性.其整流比随多孔硅孔隙率增加而减小.
关键词：
M/PS/Si微结构
孔隙率
I-V特性')" href="#">I-V特性
欧姆接触
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| 关 键 词： | M/PS/Si微结构 孔隙率 I-V特性 欧姆接触 |
| 收稿时间： | 2010-07-22 |
Electrical properties of the metal/porous silicon/Si (M/PS/Si) microstructure |
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| Sun Peng,Hu Ming,Liu Bo,Sun Feng-Yun,Xu Lu-Jia.Electrical properties of the metal/porous silicon/Si (M/PS/Si) microstructure[J].Acta Physica Sinica,2011,60(5):57303-057303. |
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| Authors: | Sun Peng Hu Ming Liu Bo Sun Feng-Yun Xu Lu-Jia |
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| Institution: | School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China;School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China |
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| Abstract: | In this paper, porous silicon (PS) was prepared in a double-tank cell using the electrochemical corrosion method. Subsequently, different metal films for electrical contacts were deposited on the PS samples by magnetron sputtering to form the M/PS/Si microstructure. The PS surface morphology was characterized by SEM. The electrical properties of the M/PS/Si microstructure were studied through the I-V characteristic tests. It was shown that Pt can form ohmic contact with PS. The I-V characteristic curves were formed from two parts:linear part and nonlinear part. However, Cu formed Schottky contact with PS and its I-V curves showed rectification characteristics. The rectification ratio decreased when the porosity of the PS increased. |
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| Keywords: | M/PS/Si microstructure porosity I-V characteristic ohmic contact |
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